Spin Hall effect in spin-valley coupled monolayer transition-metal dichalcogenides

We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is comparable to the intrinsic one with opposite sign in the presence of scalar and magnetic scattering. Intervalley scattering tends to suppress the side-jump contribution due to the loss of coherence. By tuning the ratio of intra- to intervalley scattering, the spin Hall conductivity shows a sign change in hole-doped samples. Multiband effect in other doping regime is considered, and it is found that the sign change exists in the heavily hole-doped regime, but not in the electron-doped regime

The edge engineering of topological Bi(111) bilayer

A topological insulator is a novel quantum state, characterized by symmetry-protected non-trivial edge/surface states. Our first-principle simulations show the significant effects of the chemical decoration on edge states of topological Bi(111) bilayer nanoribbon, which remove the trivial edge state and recover the Dirac linear dispersion of topological edge state. By comparing the edge states with and without chemical decoration, the Bi(111) bilayer nanoribbon offers a simple system for assessing conductance fluctuation of edge states. The chemical decoration can also modify the penetration depth and the spin texture of edge states. A low-energy effective model is proposed to explain the distinctive spin texture of Bi(111) bilayer nanoribbon, which breaks the spin-momentum orthogonality along the armchair edge.Comment: 5 pages, 5 figure

Two energy scales and close relationship between the pseudogap and superconductivity in underdoped cuprate superconductors

By measuring the low temperature specific heat, the low energy quasi-particle excitation has been derived and analyzed in systematically doped La$_{2-x}$Sr$_{x}$CuO$_{4}$ single crystals. The Volovik's relation predicted for a d-wave superconductor has been well demonstrated in wide doping regime, showing a robust evidence for the d-wave pairing symmetry. Furthermore the nodal gap slope $v_\Delta$ of the superconducting gap is derived and is found to follow the same doping dependence of the pseudogap obtained from ARPES and tunnelling measurement. This strongly suggests a close relationship between the pseudogap and superconductivity. Taking the entropy conservation into account, we argue that the ground state of the pseudogap phase should have Fermi arcs with finite density of states at zero K, and the transport data show that it behaves like an insulator due to probably weak localization. A nodal metal picture for the pseudogap phase cannot interpret the data. Based on the Fermi arc picture for the pseudogap phase it is found that the superconducting energy scale or $T_c$ in underdoped regime is governed by both the maximum gap and the spectral weight from the Fermi arcs. This suggests that there are two energy scales: superconducting energy scale and the pseudogap. The superconductivity may be formed by the condensation of Fermi arc quasiparticles through pairing by exchanging virtue bosons.Comment: 4 pages, 5 figure

Geometric curvatures of plane symmetry black hole

In this paper, we study the properties and thermodynamic stability of the plane symmetry black hole from the viewpoint of geometry. Weinhold metric and Ruppeiner metric are obtained, respectively. The Weinhold curvature gives phase transition points, which correspond to the first-order phase transition only at N=1, where $N$ is a parameter in the plane symmetry black hole. While the Ruppeiner one shows first-order phase transition points for arbitrary $N\neq 1$. Both of which give no any information about the second-order phase transition. Considering the Legendre invariant proposed by Quevedo et. al., we obtain a unified geometry metric, which gives a correctly the behavior of the thermodynamic interactions and phase transitions. The geometry is also found to be curved and the scalar curvature goes to negative infinity at the Davies' phase transition points when the logarithmic correction is included.Comment: 16 pages, 6 figure

Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate

Transition-metal dichalcogenide (TMD) semiconductors have been widely studied due to their distinctive electronic and optical properties. The property of TMD flakes is a function of its thickness, or layer number (N). How to determine N of ultrathin TMDs materials is of primary importance for fundamental study and practical applications. Raman mode intensity from substrates has been used to identify N of intrinsic and defective multilayer graphenes up to N=100. However, such analysis is not applicable for ultrathin TMD flakes due to the lack of a unified complex refractive index ($\tilde{n}$) from monolayer to bulk TMDs. Here, we discuss the N identification of TMD flakes on the SiO$_2$/Si substrate by the intensity ratio between the Si peak from 100-nm (or 89-nm) SiO$_2$/Si substrates underneath TMD flakes and that from bare SiO$_2$/Si substrates. We assume the real part of $\tilde{n}$ of TMD flakes as that of monolayer TMD and treat the imaginary part of $\tilde{n}$ as a fitting parameter to fit the experimental intensity ratio. An empirical $\tilde{n}$, namely, $\tilde{n}_{eff}$, of ultrathin MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes from monolayer to multilayer is obtained for typical laser excitations (2.54 eV, 2.34 eV, or 2.09 eV). The fitted $\tilde{n}_{eff}$ of MoS$_{2}$ has been used to identify N of MoS$_{2}$ flakes deposited on 302-nm SiO$_2$/Si substrate, which agrees well with that determined from their shear and layer-breathing modes. This technique by measuring Raman intensity from the substrate can be extended to identify N of ultrathin 2D flakes with N-dependent $\tilde{n}$ . For the application purpose, the intensity ratio excited by specific laser excitations has been provided for MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes and multilayer graphene flakes deposited on Si substrates covered by 80-110 nm or 280-310 nm SiO$_2$ layer.Comment: 10 pages, 4 figures. Accepted by Nanotechnolog

A Low-Pass Filter of Wide Stopband with a Novel Multilayer Fractal Photonic Bandgap Structure

A novel, multilayer fractal PBG is presented here as the substrate for a microstrip line and the resulting configuration builds a low-pass filter of wide stopband. Experimental results in comparison with the corresponding two filters with monolayer PBG show that the proposed filter drastically enhances the width of the stopband